Microwave Plasma Etching Cleaning Machine
Main features
Microwave plasma has a higher density compared to radio frequency inductively coupled plasma (ICP)
Suitable for processes requiring high etching rates in resins
Low self-bias voltage, with minimal ion sputtering and implantation effects
Suitable for resin etching of embedded chips in MEMS manufacturing and advanced semiconductor packaging
Due to volumetric heating, the density is extremely uniform, enabling excellent overall etching uniformity