Deep Trench Etch
Model:TD-P408
Main Unit Dimensions: 3256mm * 2508mm * 1841mm
Adopts the Inductively Coupled Plasma Etching (ICP Etching) method;
Features a uniquely designed high-density plasma source structure;
Enables control over plasma density and distribution;
Achieves process indicators of high etching rate and high uniformity.
Scope of application
- Suitable for 6-8 inch compound etching (SiC, GaN, SOI wafer), TGV, TCV and other processes; different configurations can be selected to be compatible with TSV, DRIE and other processes
Main features
High etching rate and high throughput
Excellent uniformity
Suitable for warped products
Easy maintenance and low operating costs